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2020/1/24 latest updated patent technology
  • Integrated semiconductor device with processor and heterogeneous memory and forming method and process thereof
    Cross-References to Related Applications This application requires the international application no.pct / cn2019 / ...
  • Manufacturing method of light emitting diode device
    The invention relates to a semiconductor, and in particular to a chip structure of a light emitting diode. High-power high-brightness light-emitting diodes (LEDs) underscore the importance of the current high-brightness lighting market. On a horizontal structure LED with sapphire as the substrate, high-power LEDs cannot adopt a horizontal structure due to sapphire's heat dissipation and current crowding effect. It is extremely easy to overheat and cause the chip to burn when operating at high current density. And the vertical knot ...
  • Laminated heat exchanger and manufacturing method and process of the laminated heat exchanger
    Cross Reference to Related Applications This application is based on Japanese Patent Application No. 2017-114058 filed on June 9, 2017 and Japanese Patent Application No. 2018-90096 filed on May 8, 2018, which are hereby incorporated by reference And incorporated its recorded content. The present invention relates to a laminated heat exchanger in which a plurality of flow passage tubes through which a refrigerant flows are laminated, and a method for manufacturing the laminated heat exchanger. Make ...
  • Circuit device manufacturing method
    The invention relates to a circuit arrangement. This application claims priority based on Japanese Application No. 2017-126355, filed on June 28, 2017, and refers to all the contents described in the Japanese Application. The vehicle is equipped with an electrical connection box connected to a power source and loads such as a headlight or a wiper. The electrical connection box performs electrical connection of the power source and the load, and cuts off the connection. The circuit structure contained in the electrical connection box is
  • Manufacturing method of electronic component including substrate with thermal indicator
    The present disclosure relates generally to semiconductors. More specifically, the present disclosure relates to electronic components including a substrate having a thermal indicator disposed along a perimeter of the substrate for monitoring a substrate's cumulative thermal exposure. It is known in the art that package substrates are important components in the manufacture of semiconductor packages. The package substrate functions as a carrier for the chip or die mounted thereon, and provides an electrical signal connection between the chip and the system board. Besides ...
  • Method for manufacturing substrate support for temperature adjustment of substrate processing system
    CROSS REFERENCE TO RELATED APPLICATIONS This application claims priority from US Patent Application No. 15 / 593,987, filed on May 12, 2017. The entire disclosure of the above application is incorporated herein by reference. The present disclosure relates to a substrate processing system, and more particularly to a temperature-regulated substrate support for a substrate processing system. The background description provided herein is for the purpose of generally presenting the background of the disclosure. here...
  • Method, device and process for chip level packaging
    Embodiments of the present invention generally relate to a method and apparatus for processing a substrate. Specifically, the embodiments of the present disclosure relate to a method and apparatus for a substrate stack package (pop) process. Package-on-package (pop) stacking of substrates and devices provides significant advantages primarily with respect to reducing device footprint. Due to the shortened interconnections between associated packages, pops are used to improve electronic performance. pop ...
  • Method and process for reducing reactive ion etching lag in low-K dielectric etching
    CROSS REFERENCE TO RELATED APPLICATIONS This application is related to and claims priority from US Provisional Patent Application Serial No. 62 / 518,373, filed on June 12, 2017, and US Provisional Patent Application Serial No. 62 / 570,402, filed on October 10, 2017. , The entire contents of which are incorporated herein by reference. The present disclosure relates to the processing of substrates, such as semiconductor substrates. In particular, the present disclosure provides a dielectric film on an etched substrate ...
  • The present invention relates to a surface treatment method of a semiconductor substrate that imparts alcohol repellency to the semiconductor substrate. In the manufacturing process of the semiconductor element, a stripping solution and a cleaning solution are used to completely remove the residues caused by the dry etching process. In order to remove the stripping solution and the cleaning solution from the surface, a solvent is used for washing. At this time, there is a problem that the pattern collapses due to the capillary force of the solvent used in the washing. As a solution to this pattern collapse problem, ...
  • Manufacturing method of low-resistivity film containing molybdenum
    CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of US Provisional Patent Application no. 62 / 483,857 filed on April 10, 2017 in accordance with 35u.sc§119, the contents of which are incorporated herein by reference. The background description provided herein is for the purpose of generally presenting the background of the disclosure. Described in that section and in aspects that would not otherwise be considered a prior art description at the time of submission ...
  • Nitride semiconductor laminate, semiconductor device, method for manufacturing nitride semiconductor laminate, method for manufacturing nitride semiconductor self-supporting substrate, and method and process for manufacturing semiconductor device
    The present invention relates to a nitride semiconductor laminate, a semiconductor device, a method for manufacturing a nitride semiconductor laminate, a method for manufacturing a nitride semiconductor self-supporting substrate, and a method for manufacturing a semiconductor device. When manufacturing nitride semiconductor laminates, nitride semiconductor self-supporting substrates, semiconductor devices, etc., a semiconductor layer formed of a group iii nitride semiconductor may be epitaxially grown on a predetermined substrate by a vapor phase epitaxy method (for example, non-specialized. ..
  • CROSS REFERENCE TO RELATED APPLICATIONS This application claims priority from US Provisional Application Serial No. 62 / 520,850, filed on June 16, 2017, the entire contents of which are incorporated herein by reference. The ever-expanding mobile computing applications require that increasing computing power be packaged in a smaller device space. Designers of semiconductor devices rely on the use of various new chip architectures to meet new device requirements. These new architectures include ...
  • Manufacturing method of plasma stripping tool with uniformity control
    PRIORITY This application claims the benefit of priority from US Provisional Patent Application No. 62 / 610,588, entitled "Plasma Stripping Tool with Homogeneity Control", filed December 27, 2017, which is incorporated herein by reference. This application claims the benefit of priority of US Provisional Patent Application No. 62 / 517,365 entitled "Plasma Stripping Tool with Homogeneity Control" filed on June 9, 2017 ...
  • Manufacturing method of plasma stripping tool with multi-gas injection
    PRIORITY This application claims the benefit of priority of U.S. Provisional Application No. 62 / 610,582, entitled "Plasma Stripping Tool with Multiple Gas Injection Zones", filed December 27, 2017, for all purposes, by reference Incorporate it into this article. This application requires US Provisional Application Serial No. 62 / 517,365 entitled "Plasma Stripping Tool with Homogeneity Control" filed on June 9, 2017 ...
  • Manufacturing method of switch
    The invention relates to a switch. Regarding designated countries that are allowed to cite references, this specification is incorporated by reference to the contents of Japanese Patent Application No. 2017-120714 filed in Japan on June 20, 2017 as part of the description in this specification. It is known to have an upper and lower electrode sheet; and a gasket which is arranged between the upper and lower electrode sheet and forms a predetermined interval between the upper and lower electrode sheet, and the upper and lower electrode sheet and the gasket are bonded via an adhesive ...
  • The present invention relates to a composite body comprising fine particles and a carbon material having a graphene laminated structure, an electrode material for an electrical storage device using the composite body, and an electrical storage device. In general, carbon materials such as graphite, activated carbon, carbon nanofibers, and carbon nanotubes are widely used as electrode materials for power storage devices such as capacitors and lithium-ion secondary batteries. For example, the following Patent Document 1 discloses a method using fine pores having a three-dimensional network structure ...
  • Manufacturing method of self-supporting carbon electrode
    The invention relates to a self-supporting electrode made of a self-supporting carbon-containing sheet. This electrode is particularly suitable for use as a component of a supercapacitor. In recent years, supercapacitors (sometimes also referred to as supercapacitors in the art) have attracted interest in their use in energy storage applications due to their long cycle life stability and their ability to quickly accept and provide charge. This makes them an alternative to conventional lithium-ion batteries or as conventional ...
  • Manufacturing method of solid electrolyte capacitor containing nano coating
    Cross-Reference to Related Applications This application requires a filing benefit of U.S. Provisional Patent Application Serial No. 62 / 528,232, filed on July 3, 2017, which is fully incorporated herein by reference. Tantalum polymer capacitors are provided with a solid electrolyte A sintered tantalum anode is formed from a silicon layer, a silver layer, and a carbon layer. However, one problem often associated with conventional solid electrolytic (mass) capacitors is that when exposed to high humidity environments (for example, 85% ...
  • Hybrid aluminum electrolytic capacitor and manufacturing method and process thereof
    The invention relates to an electrolytic capacitor, in particular to a hybrid aluminum electrolytic capacitor and a manufacturing method thereof. Aluminum electrolytic capacitors are widely used as basic components in electronic products. The electrolyte is the core component of aluminum electrolytic capacitors. The capacitor's service life, reliability and electrification parameters are closely related to it. The performance of the capacitor directly affects the quality of the capacitor. High and low. With the continuous improvement of the quality of electronic products and the application scope of aluminum electrolytic capacitors ...
  • Device, system, method and process for producing planar coil
    CROSS REFERENCE TO RELATED APPLICATIONS This application claims priority from US Application No. 15/598044, entitled "Apparatus, System, and Method for Producing Planar Coils," filed May 17, 2017, the entire contents of which are incorporated by reference in its entirety This article. The present disclosure relates generally to additive electronics and, more particularly, to the production of planar coils. Printed electronics use printing or "additive" methods in a variety of ...
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